1.1 Definition of semiconductor substrate

Semiconductor substrate refers to the basic materials used for semiconductor device manufacturing. It is usually a single crystal or polycrystalline material made of high purification and crystal growth technology. The substrate chip is usually a thin and solid sheet structure, and the manufacturing process of various semiconductor devices and circuits will be performed on it. The purity and quality of the substrate directly affect the performance and reliability of the final semiconductor device.

1.2 The role and application of the substrate chip

The substrate chip plays a vital role in the semiconductor manufacturing process. As the basis of the device and circuit, the substrate chip not only supports the structure of the entire device, but also provides necessary support in terms of electrical, thermal and mechanical. Its main function includes:

Mechanical support：Provide a stable structural foundation and support subsequent manufacturing steps.

Thermal management：Help heat dissipation and prevent overheating from affecting the performance of the device.

Electrical characteristics：Electrical properties that affect devices, such as conductivity, load migration rate.

In terms of application fields, substrate chips are widely used for:

Microelectronics device: such as integrated circuits (IC), microprocessor, etc.

Optical devices: such as LED, laser, light detector, etc.

High -frequency electronic devices: such as raw frequency placing large, microwave devices, etc.

Electric electronics: such as power converters, inverters, etc.

· The difference between single crystal silicon and polysilicon:

Silicon is the most commonly used semiconductor material. It is mainly in the form of single crystal silicon and polysilicon. Single crystal silicon is composed of a continuous crystal structure. It has the characteristics of high purity and non -defects and is very suitable for high -performance electronic devices. Polycrystalline silicon is composed of multiple grains. There is a crystal boundary between grains. Although the manufacturing cost is low, the electrical performance is poor. Therefore, it is usually used for some low -performance or large -scale application scenarios, such as solar cells.

· Electronic characteristics and advantages of silicon base:

The silicon base has good electronic characteristics, such as high carrier migration rate and moderate energy gap (1.1 EV). These characteristics make silicon the ideal material for manufacturing most semiconductor devices.

In addition, the silicon substrate also has the following advantages：

 High level：Through advanced purification and growth technology, you can obtain very high -purity monocrystalline silicon.

Cost：Compared with other semiconductor materials, the cost of silicon is low, and the manufacturing process is mature.

Oxide formation：Silicon can naturally form a layer of silica (SIO2), which can be used as a good insulating layer in device manufacturing.

· GaaS's high -frequency characteristics：

Arsenic is a semiconductor of a compound that is particularly suitable for high -frequency and high -speed electronic devices due to its high electrons and wide control belts. The GaaS device can work at a higher frequency, and has higher efficiency and lower noise level. This makes GaaS an important position in microwave and millimeter wave applications.

· The application of GaaS in optoelectronics and high -frequency electronic devices：

Because of its direct power gap, GaaS is also widely used in optoelectronic devices. For example, GAAS materials are widely used in manufacturing LEDs and laser. In addition, GAAS's high electronic migration rate makes it perform well in RF amplifier, microwave devices and satellite communication devices.

· SIC's thermal guidance and high power features：

Silicon carbide is a wide -ranging semiconductor with excellent thermal conductivity and high -cutting electric field. These characteristics make SICs very suitable for high -power and high temperature applications. SIC devices can work stable at a number of times higher than the voltage and temperature higher than the silicon device.

· The advantage of SIC in electronic devices：

SIC substrates show a significant advantage in the electronic electronic devices, such as lower switching loss and higher efficiency. This makes SIC more and more popular in high -power conversion applications such as electric vehicles, wind energy, and solar inverters. In addition, SIC is widely used in the field of aerospace and industrial control due to its high temperature resistance.

· GAN's high electronic migration rate and optical characteristics：

Nitride is another kind of wide -ranging semiconductor, with high electronic migration rate and strong optical characteristics. GAN's high electronic migration rate makes it very efficient in high -frequency and high -power applications. At the same time, GAN can emit light from ultraviolet to visible light, suitable for various optoelectronic devices.

· The application of GAN in power and optoelectronic devices：

In the field of power electronics, GAN devices perform well in the switching power supply and RF amplifier due to its high breakdown electric field and low -conducting resistance. At the same time, GAN also occupies an important position in the manufacturing of LEDs and laser diode in optoelectronic devices, which has promoted the progress of lighting and display technology.

· The potential of emerging materials in semiconductor：

With the development of science and technology, emerging semiconductor materials, such as GA2O3 and Diamond, show huge potential. The oxidation has a ultra -wide prohibition zone (4.9 EV), which is very suitable for high -power electronic devices. Due to its excellent thermal guidance and high load migration rate, diamonds are considered to be the next generation of high power and high -frequency applications. Ideal material. These new materials are expected to play an important role in future electronics and optoelectronic devices.

 3.1Growth technology of substrate chip 

3.1.1 Czochralski法（CZ法）

CZOCHRALSKI is the most commonly used method for making single crystal silicon chips. It is immersed in a melting silicon, and then slowly pulled out, so that the melting silicon crystals grow into a single crystal on the seed crystal. This method can produce large, high -quality monocrystalline silicon, which is very suitable for the manufacture of large -scale integrated circuits.

3.1.2 布里奇曼法（Bridgman法）

Bridgman is usually used to grow compound semiconductors such as gallium arsenic. In this method, raw materials are heated to melting state in a tadpole, and then slowly cooled to form single crystals. Bridge can control the growth speed and direction of the crystal, suitable for the production of complex compound semiconductors.

3.1.3 分子束外延（MBE）

Molecular bundle extension is a technology used to grow ultra -thin semiconductor layer on the substrate. It accurately controls the molecular bundles of different elements in the ultra -high vacuum environment and sedes up layer by layer on the substrate to form a high -quality crystal layer. MBE technology is particularly suitable for manufacturing high -precision quantum dots and ultra -thin heterogeneous structures.

3.1.4 化学气相沉积（CVD）

Chemical gas deposition is a thin film deposition technology widely used in semiconductor and other high -performance materials manufacturing. The CVD is decomposed by the gaseous front -drives and the surface of the substrate is deposited to form a solid film. CVD technology can produce thin films with highly controlled thickness and ingredients, which are very suitable for the manufacturing of complex devices.

 3.2 Chip cutting and polishing 

3.2.1 Silicon chip cutting technology

After the crystal growth is completed, the large crystal will be cut into thin slices and becomes a chip. Silicon chip cutting usually uses diamond saw tablet or wire saw technology to ensure the accuracy of cutting and reduce material losses. The cutting process needs to be accurately controlled to ensure that the thickness and surface flatness of the chip meet the requirements.

3.2.2 Polishing and cleaning technology

The cut chip needs to be polished and cleaned to achieve a highly flat and smooth surface, which is essential for subsequent photocalism and device manufacturing. Polishing is usually divided into mechanical polishing and chemical mechanical polishing (CMP). The latter combines mechanical and chemical effects to obtain extremely high surface quality. The cleaning process is used to remove the particles and impurities on the surface to ensure the cleanliness of the surface of the chip.

 3.3Chip doped and oxidation 

3.3.1 The purpose and method of doping

Divery refers to the introduction of a small amount of impurities in semiconductor crystals to change its electrical characteristics. By doping, the conductivity and carrier concentration of semiconductor materials can be controlled. Commonly used doping methods include the diffusion method and ion injection method. The former is achieved through the impurities at high temperature, and the latter uses an ion to inject impurities directly into the chip.

3.3.2 Oxidation technology and its applications in the chip

Oxidation technology is a key step in semiconductor manufacturing. It is mainly used to form a layer of insulation silicon (SiO2) layer on the surface of the chip. Oxidation is usually achieved by introducing oxygen or water vapor at high temperature. The oxidation layer not only provides electrical insulation, but also can be used as a mask protection in subsequent light and etching.

4.1 The size and thickness standard of the chip

The size and thickness of the substrate chip is a key parameter that determines its applicability. The standard chip size range ranges from several inches to tens of inches, and the thickness is usually between hundreds of microns and several millimeters. These parameters need to be strictly controlled to ensure compatibility with manufacturing equipment and the accuracy of subsequent processing.

4.2 Effect of crystal defect and density density

The defects and position in the crystal will significantly affect the performance of semiconductor devices. For example, a high -density bit error may lead to the scattering of the load, which reduces the electronic migration rate of the material, thereby affecting the speed and efficiency of the device. Therefore, in the manufacturing process, advanced testing technology is needed to control and reduce these defects and positions.

4.3 Surface flatness and polishing quality

The flatness and smoothness of the surface of the chip are the basis for ensuring the accuracy of device manufacturing. The height and flat surface can reduce the errors generated during the optical and etching process, and improve the consistency and performance of the device. The quality of polishing quality is directly related to the resolution and etching accuracy of the photoresistic graphics. Therefore, in the manufacturing process, the polishing and cleaning process needs to reach extremely high standards.

4.4 Measurement of electrical characteristics (resistivity, carrier density, etc.)

The electrical characteristics of the chip, such as resistance and carrier density, are important indicators to assess their performance. These characteristics are usually determined by Hall effect measurement and resistivity measurement technology. The resistivity reflects the conductivity of the material, while the density of the carrier affects the response speed and current loading capacity of the material.

4.5 The mechanical strength and thermal performance of the chip